feature/SOF-8044 Feature: add the h-BN boron-vacancy formation-energy tutorial page

lang/en/docs/includes/references.bib

@@ -83,7 +83,7 @@ @doi =
 @article{Bertoldo2022,
     title = {Quantum point defects in 2D materials - the QPOD database},
     author = {Bertoldo, Fabian and Ali, Sajid and Manti, Simone and Thygesen, Kristian S.},
-    journal = {Nature},
+    journal = {npj Computational Materials},
     year = {2022},
     @doi = {10.1038/s41524-022-00730-w},
     url = {https://doi.org/10.1038/s41524-022-00730-w}

lang/en/docs/tutorials/materials/specific/defect-point-vacancy-boron-nitride-simulation.md

@@ -0,0 +1,157 @@
+---
+tags:
+  - defects
+  - vacancy
+  - point-defects
+  - h-BN
+  - boron-nitride
+  - 2D-materials
+  - formation-energy
+  - D-0D-VAC
+
+hide:
+  - tags
+# YAML header
+render_macros: true
+---
+
+# Vacancy Point Defects in Hexagonal Boron Nitride (Formation Energy)
+
+## 1. Introduction
+
+This tutorial calculates the formation energy of a neutral boron vacancy (V_B) in the h-BN
+structure created in the [Vacancy Point Defect in h-BN](defect-point-vacancy-boron-nitride.md)
+tutorial, reproducing a result from the following manuscript.
+
+!!!note "Manuscript"
+    Fabian Bertoldo, Sajid Ali, Simone Manti & Kristian S. Thygesen, "Quantum point defects in 2D
+    materials - the QPOD database", npj Computational Materials, 2022.
+    [DOI:10.1038/s41524-022-00730-w](https://doi.org/10.1038/s41524-022-00730-w){:target='_blank'}.
+    [@Bertoldo2022]
+
+The manuscript's Quantum Point Defect (QPOD) database tabulates formation energies for point defects
+in 2D materials, computed at every accessible charge state and chemical-potential limit. This
+tutorial reproduces one entry of that table: the neutral boron vacancy in h-BN at the standard-state
+chemical potentials, [QPOD entry `1BN-1.2d.v_B.0.1`](https://qpod.fysik.dtu.dk/material/1BN-1.2d.v_B.0.1).
+
+## 2. Prerequisites
+
+Run the [Vacancy Point Defect in h-BN](defect-point-vacancy-boron-nitride.md) tutorial first, using
+the `defect_point_vacancy_boron_nitride.ipynb` notebook embedded in its section 6: that notebook
+saves two materials into the `uploads` folder, the pristine supercell as `h-BN supercell` and the
+defective structure as `B-vacancy h-BN`. This notebook loads both back by name. A name that does
+not resolve stops the notebook rather than silently substituting a different material.
+
+## 3. What is reproduced
+
+The formation energy of a point defect X in charge state q follows QPOD's Eq. (3):
+
+$$
+E_f[X^q] = E_{\text{tot}}[X^q] - E_{\text{tot}}[\text{pristine}] - \sum_i n_i \mu_i + q E_F
+$$
+
+where $\mu_i$ is the total energy of the standard state of element $i$, per atom, and $n_i$ is the
+*change* in the number of atoms of that element between the defective and the pristine cell —
+negative when an atom is removed. A vacancy changes a single element, so only its $\mu$ enters the
+sum; for V_B, $n_B = -1$, and the formula reduces to $E_f = E_{\text{tot}}[\text{defect}] -
+E_{\text{tot}}[\text{pristine}] + \mu_B$.
+
+That is also why the standard-state and "N-poor" rows of QPOD's table agree: both fix μ_B at the
+same value, the total energy per atom of α-boron. Only the "B-poor" (nitrogen-rich) limit moves
+μ_B, and it lowers the formation energy by 1.29 eV, to 8.89 eV. This tutorial reproduces the
+standard-state number, 10.18 eV, and reports the B-poor number for context.
+
+QPOD also tabulates the −1 and +1 charge states, but only q = 0 is compared here. A charged
+supercell interacts with its own periodic images, and correcting for that requires a finite-size
+correction that the workflow used here does not apply — it can set a nonzero total charge on the
+cell, but the number that comes out could not be compared to QPOD's corrected values at the
+precision this comparison is being made at.
+
+## 4. Computational settings
+
+| | this tutorial | QPOD |
+|---|---|---|
+| Code | Quantum ESPRESSO | GPAW (Grid-based Projector-Augmented Wave method) |
+| Functional | PBE (Perdew-Burke-Ernzerhof) | PBE |
+| Pseudopotentials | ultrasoft (GBRV, Garrity-Bennett-Rabe-Vanderbilt) | PAW (Projector-Augmented Wave; GPAW setups) |
+| Plane-wave cutoff | 40 Ry / 200 Ry (GBRV's recommended pair for ultrasoft sets), identical for every job | 800 eV |
+| k-point sampling | density 6 Å⁻¹, converted to a grid per cell — 3 × 5 × 1 for the defect cell | 6 Å⁻¹ (relaxation), 12 Å⁻¹ (ground state) |
+| Geometry | as built by the structure notebook, not relaxed | relaxed to 0.01 eV/Å |
+| Spin | polarized (nspin = 2) on the defect cell | polarized |
+| Cell | 48 → 47 atoms, 15.05 × 8.69 Å, 8.69 Å defect spacing, 20 Å vacuum | 84 → 83 atoms (symmetry-broken), 15.06 Å defect spacing, 15 Å vacuum |
+
+This tutorial uses ultrasoft (GBRV) pseudopotentials under PBE; QPOD used PAW, GPAW's own setups.
+Plane-wave cutoffs of a PAW and an ultrasoft calculation are not comparable numbers, so the 800 eV
+and the 40 Ry / 200 Ry pair above cannot be read as one converging faster than the other. The
+pseudopotential family and cutoff together are one of the differences the 0.5 eV tolerance below
+covers. The notebook submits Total Energy jobs for the pristine cell, α-boron and nitrogen with
+the same functional, pseudopotentials and cutoff as the defect job. The elemental references are
+the platform's own seeded elemental materials, selected by element tag — which is why μ_B is
+specifically α-boron's total energy — and on an account where those are not seeded, the notebook
+stops before submitting anything. Each reference job is named for its material and model, and a
+job is reused only when an earlier finished job of this account carries that exact name —
+changing the cutoff or the pseudopotential type produces fresh references rather than silently
+reusing the old ones. The workflow resolves the elemental reference energies by material and
+account rather than by job name, so the results cell recomputes E_f from the notebook's own three
+total energies — the defect cell, the pristine cell and boron per atom — and prints it next to the
+workflow's value; when the two differ, it warns that the workflow resolved a different reference
+energy, and the verdict line says so as well.
+
+Two further offsets are quantified for the cell used here, estimated with a machine-learned
+potential: the smaller supercell shifts the neutral formation energy by 0.02 eV relative to
+QPOD's cell, and skipping relaxation costs a further 0.04 eV. Both are small; the 0.5 eV tolerance
+below covers pseudopotential-set, cutoff, k-point density and reference-phase differences, which
+are not estimated. The cell's defect-defect spacing, 8.69 Å, is below the >15 Å minimum QPOD
+applies when choosing a supercell — the 0.02 eV estimate says the neutral vacancy tolerates the
+smaller cell.
+
+A result within 0.5 eV of 10.18 eV counts as reproducing the manuscript.
+
+## 5. Theory and experiment
+
+Both the 10.18 eV target and the number this notebook produces are PBE formation energies —
+a comparison between two calculations, not against a measurement. Formation energies of point
+defects of this kind are not directly accessible experimentally.
+
+The electronic side of the same defect carries the same caveat in QPOD itself: the PBE band gap
+of pristine h-BN is 4.67 eV, well below the HSE hybrid-functional value of 5.68 eV, so nothing
+quantitative about the defect's electronic levels relative to the band edges should be read from
+either functional.
+
+## 6. What the default run does
+
+Running the notebook end to end submits at most four jobs: the defect calculation, and up to
+three reference Total Energy calculations, for the pristine cell, α-boron and elemental nitrogen.
+Nitrogen does not enter the formation energy — its change in atom count is zero — but the
+workflow resolves a reference energy for every element in the cell and stops if one is missing,
+so the nitrogen job is required. The defect job is created and submitted on every run; only the
+three reference Total Energy jobs are reused when the account already holds a matching one, and
+created and submitted otherwise.
+
+The jobs run on `cluster-001`, queue OF, 40 cores, with a four-hour time limit; the default one
+hour is not enough for the spin-polarized defect cell. Setting `CLUSTER_NAME = None` uses the first
+cluster listed for the account; leaving it at `cluster-001`, or any other name that is not
+available under the account, makes the notebook stop and list the clusters that are, so that
+`CLUSTER_NAME` in the parameters cell can be set to one of them — it does not silently move the
+calculation onto a different machine.
+
+The last cell prints one line, `Reproduces Bertoldo et al. (2022): yes` or `no`, next to the
+calculated formation energy; when the consistency check above failed, the same line carries
+`-- reference mismatch, see warning above`, and the verdict should not be read until that is
+resolved.
+
+## 7. Interactive JupyterLite notebook
+
+The notebook below computes the formation energy and prints the comparison with QPOD. Select
+*Run* > *Run All Cells*.
+
+{% with origin_url=config.extra.jupyterlite.origin_url_lab %}
+{% with notebooks_path_root=config.extra.jupyterlite.notebooks_path_root %}
+{% with notebook_name='specific_examples/defect_point_vacancy_boron_nitride_SIMULATION.ipynb' %}
+{% include 'jupyterlite_embed.html' %}
+{% endwith %}
+{% endwith %}
+{% endwith %}
+
+
+## 8. References

lang/en/docs/tutorials/materials/specific/defect-point-vacancy-boron-nitride.md

@@ -21,7 +21,7 @@ render_macros: true
 This tutorial demonstrates the process of creating materials with vacancy point defects, based on the work presented in the following manuscript:
 
 !!!note "Manuscript"
-    Fabian Bertoldo, Sajid Ali, Simone Manti & Kristian S. Thygesen, "Quantum point defects in 2D materials - the QPOD database", Nature, 2022. [DOI:10.1038/s41524-022-00730-w](https://doi.org/10.1038/s41524-022-00730-w){:target='_blank'}. [@Bertoldo2022; @Kohan2000]
+    Fabian Bertoldo, Sajid Ali, Simone Manti & Kristian S. Thygesen, "Quantum point defects in 2D materials - the QPOD database", npj Computational Materials, 2022. [DOI:10.1038/s41524-022-00730-w](https://doi.org/10.1038/s41524-022-00730-w){:target='_blank'}. [@Bertoldo2022; @Kohan2000]
 
 We use the [Materials Designer]({{ interface_url }}/materials-designer/overview/) and JupyterLite environment to create a nanoribbon of hexagonal boron nitride (h-BN) and introduce vacancy defects. The process combines the capabilities of nanoribbon creation and point defect introduction.
 
@@ -126,7 +126,7 @@ Click `Run` > `Run All` in the top menu to run the notebook and preview the resu
 
 ## 5. Save the Material
 
-After running both notebooks, user can visualize the structure of h-BN with the vacancy defect in the Materials Designer 3D viewer.
+After running both notebooks, user can visualize the structure of h-BN with the vacancy defect in the Materials Designer 3D viewer. The combined notebook embedded in section 6 below names and saves both structures — the pristine supercell as `h-BN supercell` and the defective one as `B-vacancy h-BN` — so a later tutorial can load each by name.
 
 ![Vacancy in h-BN](../../../images/tutorials/materials/defects/defect_point_vacancy_boron_nitride/6-wave-result.webp "Vacancy in h-BN")
 

mkdocs-guide.yml

@@ -196,6 +196,7 @@ nav:
             - Substitutional Defects in Graphene (Band Structure):              tutorials/materials/specific/defect-point-substitution-graphene-simulation.md
             - Vacancy-Substitution Pair in GaN:                                 tutorials/materials/specific/defect-point-pair-gallium-nitride.md
             - Vacancy Defect in h-BN:                                           tutorials/materials/specific/defect-point-vacancy-boron-nitride.md
+            - Vacancy Defect in h-BN (Formation Energy):                        tutorials/materials/specific/defect-point-vacancy-boron-nitride-simulation.md
             - Interstitial Defect in SnO:                                       tutorials/materials/specific/defect-point-interstitial-tin-oxide.md
             - Island Surface Defect in TiN:                                     tutorials/materials/specific/defect-surface-island-titanium-nitride.md
             - Step Surface Defect on Pt(111):                                   tutorials/materials/specific/defect-surface-step-platinum.md

mkdocs.yml

@@ -156,6 +156,7 @@ nav:
             - Substitutional Point Defects in Graphene (Band Structure):    tutorials/materials/specific/defect-point-substitution-graphene-simulation.md
             - Vacancy-Substitution Pair Defects in GaN:                     tutorials/materials/specific/defect-point-pair-gallium-nitride.md
             - Vacancy Point Defect in h-BN:                                 tutorials/materials/specific/defect-point-vacancy-boron-nitride.md
+            - Vacancy Point Defect in h-BN (Formation Energy):              tutorials/materials/specific/defect-point-vacancy-boron-nitride-simulation.md
             - Interstitial Point Defect in SnO:                             tutorials/materials/specific/defect-point-interstitial-tin-oxide.md
             - Island Surface Defect Formation in TiN:                       tutorials/materials/specific/defect-surface-island-titanium-nitride.md
             - Step Surface Defect on Pt(111):                               tutorials/materials/specific/defect-surface-step-platinum.md