Physics-based 1D TCAD simulation of a silicon MOS capacitor with validated C-V, oxide, doping, temperature, and mesh-convergence studies.
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Updated
Aug 11, 2026 - Python
Physics-based 1D TCAD simulation of a silicon MOS capacitor with validated C-V, oxide, doping, temperature, and mesh-convergence studies.
codes for simulation of basic semiconductor devices (1d): equilibrium, IV, CV, time dependent
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